台面刻蚀深度对埋栅SITH栅阴击穿的影响  

Influence of Mesa Etching Depth on Gate-Cathode Breakdown Characteristics of SITH with Buried Gate Structure

作　　者：岳红菊[1] 刘肃[1] 王永顺[2] 李海蓉[1] 

机构地区：[1]兰州大学物理科学与技术学院微电子与固体电子学研究所,兰州730000 [2]兰州交通大学电子与信息工程学院,兰州730070

出　　处：《半导体技术》2009年第6期546-548,共3页Semiconductor Technology

摘　　要：针对台面刻蚀深度对埋栅型静电感应晶闸管(SITH)栅阴击穿特性的影响做了实验研究。实验结果表明,随着台面刻蚀深度的增大,器件栅阴击穿由原来的软击穿变为硬击穿,同时击穿电压升高,SITH设计了独立的台面槽,并研究了台面刻蚀深度与栅阴击穿电压和栅阴击穿特性间的关系,指出台面刻蚀深度的增加可以有效减弱表面电荷和表面缺陷对器件的影响,改善栅阴击穿曲线,提高栅阴击穿电压。同时,还简要描述了这种器件的制造工艺。The impact of mesa etching depth on gate cathode breakdown of buried-gate SITH was studied experimentally. With the increase in mesa etching depth, gate-cathode breakdown voltage rises and breakdown characteristic alters from soft breakdown to hard breakdown gradually. The device was designed to contain a table-board groove, which could reduce the influence of surface charges and defects. Meanwhile, the relationship between mesa etching depth and gate-cathode breakdown voltage and breakdown characteristic was presented. The fabricating process of the device was also investigated.

关 键 词：静电感应晶闸管 埋栅结构 台面刻蚀 栅阴击穿 表面缺陷 

分 类 号：TN386.7[电子电信—物理电子学]