表面预处理对Ge MOS电容特性的影响  

Impacts of Surface Pretreatment Process on the Properties of Ge MOS Capacitor

作　　者：邹晓[1] 蒋万翔[2] 徐静平[3] 

机构地区：[1]江汉大学机电与建筑工程学院,武汉430056 [2]许昌职业技术学院机电工程系,河南许昌461000 [3]华中科技大学电子科学与技术系,武汉430074

出　　处：《半导体技术》2009年第6期573-575,606,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60776016)

摘　　要：通过不同气体(NO、N2O、NH3)对Ge衬底进行表面预处理,生长GeOxNy界面层,然后采用反应磁控溅射方法生长HfTiO薄膜,制备HfTiO/GeOxNy叠层高k栅介质GeMOS电容,研究表面预处理对界面层以及界面层对器件性能的影响。隧穿电子扫描电镜(TEM)、栅电容-电压(C-V)栅极漏电流-电压(J-V)的测量结果表明,湿NO表面预处理能生长高质量的界面层,降低界面态密度,抑制MOS电容的栅极漏电流密度。施加高场应力后,湿NO表面预处理样品的平带漂移及漏电流增加最小,表示器件的可靠性得到有效增强。Novel surface pretreatments for preparing GeOxNy interlayer on Ge substrate by NO, N2O, NH3 gas, followed as depositing high-quality HfTiO gate dielectric by reactive co-sputtering method, and impacts of surface pretreatments on interlayer, and interlayer on electrical and reliability properties were investigated. The experimental results of TEM, C-V and J-V show that wet-NO pretreatment can effectively improve interface quality, and decrease gate leakage current of Ge MOS capacitors. Good reliability properties for wet-NO pretreatment sample with the smallest increase of leakage current and flat-band voltage after high- field stress are achieved.

关 键 词：锗金属氧化物半导体 氧化钛铪 表面预处理 界面层 高k 磁控溅射法 

分 类 号：TN305.2[电子电信—物理电子学] TN386.1