射频磁控溅射SiO_x薄膜的制备与阻隔性能研究  

Preparation of Silicon Dioxide Film by RF Magnetron Sputtering and Study of Its Barrier Performance

作　　者：董峰[1] 高德[1] 林晶[1] 刘壮[1] 

机构地区：[1]哈尔滨商业大学,哈尔滨150028

出　　处：《包装工程》2009年第6期21-23,共3页Packaging Engineering

基　　金："十一五"国家科技支撑重大项目(2006BAD05A05);黑龙江省2008年研究生创新基金(YJSCX2008-194HLJ)

摘　　要：利用磁控溅射技术,以SiO2为靶材,Ar为射频源气体,在PET基材上制备SiOx薄膜。研究了不同放电功率、氩气流量、镀膜时间等参数对SiOx薄膜阻隔性能的影响。结果表明:在一定范围内,薄膜的阻隔性能随放电功率的增大而增大,而后逐渐减小;氩气流量对薄膜的阻隔性能也有一定影响;镀膜时间在10min时SiOx薄膜的阻隔性能最好。扫描电镜SEM测试表明,在氩气流量为100cm3/min,镀膜时间10min,1500W放电功率下制备的SiOx薄膜阻隔性能较好、表面较均匀。Silicon dioxide films were prepared by magnetron sputtering on PET substrates with carrier gas Ar and silicon dioxide target. The influence of processing parameters on barrier properties was studied, of which were discharge power, argon gas flow and deposition time. The result showed that the barrier properties increased with the increasing discharge power, thert decreased gradually; argon gas flow also plays a role in the barrier properties; the deposition time of the best barrier property was 10 minute. The SEM results showed that film surface was uniform and had a good barrier property under the condition of 100cm^3/min of argon gas flow, 10 min of deoosition time, and 1500 W of discharge power.

关 键 词：磁控溅射 SIOX薄膜 阻隔性能 透氧 透湿 

分 类 号：TB487[一般工业技术—包装工程] TB43