RFID电子标签中EEPROM的改进设计  

The improvement design of EEPROM in RFID tag

作　　者：钟桂东[1] 王炜[1] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160

出　　处：《电子技术应用》2009年第6期85-87,共3页Application of Electronic Technique

摘　　要：介绍了RFID无源标签设计中的EEPROM存储器结构,通过分析Dickson电荷泵的工作原理以及广泛应用的NMOS电荷泵的设计思想,提出了一种改进的PMOS电荷泵设计方法,能够消除NMOS电荷泵电路中由于衬底接地而产生的衬偏电压造成的体效应,并对该PMOS电荷泵设计方法进行了仿真分析。This paper introduced the structure design of of the Dickson charge pump and the design of NMOS charge was presented. It can eliminate the struct effect caused by analysis about the PMOS charge pump design. EEPROM memory in passive RFID tags, analyzed the working principle pump which was widely used.An improved PMOS charge pump design vohage-liner due to the substrate grounding,and made a simulation

关 键 词：RFID EEPROM 电荷泵 NMOS管 PMOS管 

分 类 号：TN432[电子电信—微电子学与固体电子学]