具有势垒增强层的MSM光电探测器暗电流的计算  

Theoretical Calculation of the Dark Current in MSM-PD with a Barrier-enhancement Layer

作　　者：覃化[1] 史常忻[1] 王森章[1] 

机构地区：[1]上海交通大学微电子技术研究所,200030

出　　处：《固体电子学研究与进展》1998年第2期176-180,共5页Research & Progress of SSE

摘　　要：将具有完全晶格匹配势垒增强层的MSM－PD简化为一维模型，并通过理论分析，得出了它的暗电流特性，进一步得到器件暗电流与势垒增强层的关系。Metal-Semiconductor-Metal Photo-Detector (MSM-PD) with a lattice-matched barrier-enhancement layer is simulated by using an one-dimensionalmodel. The dark current characteristic and the relation of the dark current to theberrier-enhancement layer are derived theoretically.

关 键 词：肖特基势垒 势垒增强层 暗电流特性 MSM-PD 

分 类 号：TN36[电子电信—物理电子学]