工艺参数对真空紫外光直接光CVDSiO_2/Si界面特性的影响  

Effects of Deposition Conditions on Interfacial Properties of SiO 2/Si Formed by VUV Light Direct Photo CVD

作　　者：谢茂浓[1] 杜开瑛[1] 刘玉荣 

机构地区：[1]四川联合大学物理系

出　　处：《微电子学》1998年第3期172-175,共4页Microelectronics

摘　　要：采用高频（１ＭＨｚ）Ｃ－Ｖ测试和红外谱，研究了工艺参数对Ｘｅ激发真空紫外光（ＶＵＶ）直接光ＣＶＤＳｉＯ２的ＳｉＯ２／Ｓｉ界面特性的影响。结果表明：衬底温度Ｔｓ对固定氧化物电荷密度ΔＮｏｔ、慢界面态密度ΔＮｓｔ的影响比反应室总气压Ｐｃ和ＳｉＨ２／Ｏ２分压比显著。ΔＮｏｔ和ΔＮｓｔ在１１０°Ｃ附近有极小值，大小为１０１０ｃｍ－２量级。Ｔｓ＞１２０°Ｃ，ΔＮｏｔ呈正电荷性，Ｔｓ＜１１０°Ｃ，ΔＮｏｔ呈负电荷性。Ｓｉ－Ｏ－Ｓｉ伸缩振动吸收峰位在１０６０～１０８０ｃｍ－２间，随Ｔｓ的减少而增加。Effects of deposition conditions on the interfacial properties of the CVD SiO 2 formed by vacuum ultraviolet (VUV)light are studied using high frequency(1 MHz) capacitance voltage( C V ) test and infrared(IR) spectroscopy. It has been shown that the effect of substrate temperature( T s) on the fixed oxide charge density(Δ N ot ) and slow interface state density(Δ N st ) is more notable than the total pneumatic of the reaction chamber and the part pneumatic ratio of SiH 4/O 2. Δ N ot and Δ N st have minimum values in the order of 10 10 cm -2 for T s near 110 °C. Δ Ν ot is positive for T s greater than 120 °C, and negative for T s less than 110 °C.

关 键 词：光CVD 半导体 光化学汽相淀积 

分 类 号：TN305[电子电信—物理电子学]