热应力条件下VLSI金属化布线的可靠性  

Impact of Temperature Gradient on Electromigration Characteristics in VLSI Metallization

作　　者：郭伟玲[1] 李志国[1] 周天夷 孙英华[1] 张万荣 沈光地[1] 

机构地区：[1]北京工业大学电子工程系

出　　处：《微电子学》1998年第3期203-207,共5页Microelectronics

基　　金：国家自然科学基金;北京市自然科学基金

摘　　要：利用深层掩埋Ｔｉ－Ｗ自加热结构产生了沿金属化条长方向的温度梯度，通过电阻测温法精确测定实验条上的温度分布，从电迁徙平均失效时间、ＳＥＭ分析等角度，研究了温度梯度对电迁徙的影响。实验发现，选择合适的工艺条件可保证电阻测温法的稳定性；温度梯度的不同取向对电迁徙平均失效时间存在较大影响，逆向温度梯度可极大地提高金属化的抗电迁徙寿命。Temperature gradient along the metallization stripe is obtained by adopting buried self heating Ti W alloy film in this work.The accurate temperature distribution along the stripe is measured by using resistance method.The electromigration dependence on temperature and its gradient is investigated.It has been shown that temperature with different direction can significantly affect electromigration median time to failure,and the reversed temperature gradient can greatly increase the lifetime of metallization to resist electromigration.

关 键 词：VLSI 金属化 可靠性 

分 类 号：TN470.6[电子电信—微电子学与固体电子学]