VLSI金属化布线电徙动动力学温度相关性研究  

Electromigration Dependence on Temperature in VLSI Metallization

作　　者：李志国[1] 郭伟玲[1] 朱红 吉元[1] 程尧海[1] 孙英华[1] 张万荣 

机构地区：[1]北京工业大学电子工程系

出　　处：《Journal of Semiconductors》1998年第6期452-457,共6页半导体学报（英文版）

基　　金：国家自然科学基金;北京市自然科学基金

摘　　要：电徙动失效是ＶＬＳＩ金属化系统的主要失效形式．本文提出了一种新型ＴｉＷ膜自加热结构，产生沿金属化条长方向的温度梯度．文中采用分别独立的的试验和测温金属条结构，利用电阻与温度间的线性关系精确确定金属条上的温度分布，首次从理论和实验上深入研究了电徙动失效与温度梯度间的动力学关系．实验结果表明，在２０～３５℃的温度梯度作用下，电徙动平均失效时间。Abstract Electromigration is the main failure mode in VLSI metallization system. In this article, temperature gradient along the metallization stripe is obtained by adopting novel buried self heating Ti W alloy film. Using the separate metal stripes, one for experiment and the other for temperature measurement, and the linear relation between resistance and temperature, we measure temperature along the stripe accurately. The dynamic relation between electromigration and temperature gradient is investigated for the first time. The experiment results show that electromigration median time to failure, open failure location and electromigration resistance change indicate new characteristic behaviors within temperature gradient 20￣35℃.

关 键 词：VLSI 布线 金属化 电徙动动力学 

分 类 号：TN470.597[电子电信—微电子学与固体电子学]