纳米级PtSi/Si(111)膜成形工艺与连续性研究  

Technological Study on Formation and Continuity of Nanometre-Level PtSi(111) Film

作　　者：王培林[1] 盛文斌[1] 杨晶琦 徐达鸣[1] 

机构地区：[1]哈尔滨工业大学

出　　处：《Journal of Semiconductors》1998年第6期468-471,共4页半导体学报（英文版）

摘　　要：研究了在（１１１）Ｓｉ衬底上沉积５ｎｍＰｔ膜经不同工艺成形后其反应产物及膜的连续性．结果表明高温短时间退火（６００℃。Abstract The constitution and continuity of PtSi(111) films formed by evaporating 5nm Platinum film on Si(111) substrates, and then, annealed at different temperatures, are studied.The results show that the technology with a high temperature and short time annealing (600℃、3min) is favorable to form a continuous nanometre-level PtSi film.

关 键 词：纳米级 硅化铂 硅 半导体薄膜技术 

分 类 号：TN304.055[电子电信—物理电子学]