ZnO基紫外光透明导电薄膜的研究进展  

Research Progress on ZnO Base UV-Transparent Conducting Thin Films

作　　者：黄竹[1] 许积文[1] 

机构地区：[1]桂林电子科技大学信息材料科学与工程系,广西桂林541004

出　　处：《电工材料》2009年第2期41-46,共6页Electrical Engineering Materials

基　　金：广西教育厅科研项目(桂教科研200734)

摘　　要：ZnO是一种宽禁带半导体材料,通过阳离子Al3+掺杂可以改善其导电性,而且通过掺杂MgO进行"能带剪裁"可以实现从紫外到可见光范围内的完全透明。因此,ZnO基紫外光透明导电薄膜近年来逐渐成为半导体光电材料与器件的研究热点之一。本文介绍了紫外光透明导电薄膜MgxZn1-xO∶Al的基本特性、制备方法及研究进展。As a wide-band-gap semiconductor material, Al^3＋-doped ZnO may enhance the electric conductivity, the MgO-doped can cut the band gap which actualize the absolute transparence from UV to visible light. Therefore, ZnO base UV-transparent conducting thin films have turned into the focus of the wide-band-gap semiconductor materials for future electronic devices. The fabrication techniques, structural and optoelectronic properties and potential applications ofMgxZn1-xO：Al thin films are summarized in this paper. The development prospects are also discussed.

关 键 词：MgxZn1-xO∶Al薄膜 紫外光透明导电 宽禁带 结构和光电性能 

分 类 号：TN304.055[电子电信—物理电子学] X703[环境科学与工程—环境工程]