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出 处:《Chinese Science Bulletin》2009年第12期2013-2017,共5页
基 金:Supported by the National Basic Research Program of China(Grant Nos.2006CB601006,2007CB310404);High-Tech Research and Development Pro-gram of China(Grant No.2006AA12Z120)
摘 要:This paper describes the design and fabrication of superconducting hot electron bolometer (HEB) mixer based on ultra-thin superconducting NbN films. The high quality films were epitaxially grown on high resistance Si substrates. The device was fabricated by magnetron sputtering, electron beam lithography (EBL), reactive ion etching (RIE), lithography, and so on. The device's resistance-tempera-ture (R-T) curves and current-voltage (I-V) curves were studied. The results of THz response of the device are presented. Y-factor technique was used to measure the device's noise temperature. When the device was irradiated with a laser radiation of 2.5 THz, the obtained lowest noise temperature of the device was 2213 K.This paper describes the design and fabrication of superconducting hot electron bolometer (HEB) mixer based on ultra-thin superconducting NbN films. The high quality films were epitaxially grown on high resistance Si substrates. The device was fabricated by magnetron sputtering, electron beam lithography (EBL), reactive ion etching (RIE), lithography, and so on. The device's resistance-temperature (R-T) curves and current-voltage (I-V) curves were studied. The results of THz response of the device are presented. Y-factor technique was used to measure the device's noise temperature. When the device was irradiated with a laser radiation of 2.5 THz, the obtained lowest noise temperature of the device was 2213 K.
关 键 词:超导 制造 混合器 反应离子刻蚀 测辐射热计 反应装置 薄膜外延生长 光刻技术
分 类 号:TN405.983[电子电信—微电子学与固体电子学] TM26[一般工业技术—材料科学与工程]
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