平面型2．6μmInGaAs红外探测器变温特性研究  

Temperature-dependent characteristics study of 2.6μm planar-type InGaAs infrared detector

作　　者：李永富[1,2] 唐恒敬[1,2] 张可峰[1,2] 李淘[1,2] 宁锦华[1,2] 李雪[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院研究生院,北京100039

出　　处：《激光与红外》2009年第6期612-617,共6页Laser & Infrared

基　　金：国家自然科学基金重点项目(No.50632060);中国科学院知识创新工程青年人才领域前沿项目(No.B2-1,C2-32)资助

摘　　要：通过闭管扩散方式,在NIN型InP/In0.82Ga0.18As/InP材料上制备了单元及八元平面型红外探测器件,研究了器件的光谱响应特性、变温电流-电压特性以及器件探测率的温度响应特性。研究表明,不同温度下,在较低的偏压下,器件的正向暗电流的主要成分为源于材料缺陷的产生-复合电流,随着电压增大,器件的电流将会受到串联电阻的限制而趋于饱和。在近室温(>250 K)下,器件的反向电流主要以扩散电流和产生-复合电流为主,随着温度降低(<158 K),与偏压成正比的隧穿电流将占优势。温度>158 K时,器件的R0A值主要受产生-复合机制影响,温度<158 K时,R0A值则受缺陷辅助遂穿机制限制。随着温度的降低,器件的峰值探测率在210 K达到峰值,单元器件约1.7×109cmHz1/2/W,八元器件约9.4×109cmHz1/2/W。The planar-type single-elemental and eight-elemental InGaAs 2.6μm cut-off wavelength infrared detectors are fabricated on the NIN-InP/Ino. s2 Gao. is As/InP epitaxial materials using sealed-ampoule Zn-diffusion method. And the temperature-dependent spectral response, dark current characteristics and peak detectivity of the detectors are analyzed. The results indicate that the main resources of the forward current arise from material-defects induced generation-recombination current at lower bias under different temperatures, and as the forward voltage increases the forward current limited by the series resistance tends to be a constant. Near room temperature （ 〉 250 K） ,the main resources of the reverse current of the detectors are diffusion-current and generation-recombination current, and with the decline of the temperature, the tunneling-current proportional to the bias take charge. The RoA of the detectors is determined by generation-recombination mechanism above 158 K, while it is limited by traps-assisting-tunneling mechanism below 158 K. As the decrease of temperature,the peak detectivity reach a peak value of 1.7 × 10^9 cmHz^1/2/W for the single- elemental detectors and 9.4 × 10^9 cmHz^1/2/W for the eight-elemental detectors at 210 K.

关 键 词：InGaAs红外探测器 产生-复合电流 隧穿电流 暗电流 优值因子 峰值探测率 

分 类 号：TN214[电子电信—物理电子学]