Preparation and properties of SiCN diffusion barrier layer for Cu interconnect in ULSI  

作　　者：周继承 石之杰 郑旭强 

机构地区：[1]School of Energy Science and Engineering, Central South University [2]School of Physical Science and Technology, Central South University

出　　处：《中国有色金属学会会刊：英文版》2009年第3期611-615,共5页Transactions of Nonferrous Metals Society of China

基　　金：Project(60371046) supported by the National Natural Science Foundation of China;Project(713-394201034) supported by the International Cooperant Foundation of Hunan Province, China

摘　　要：SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si—C, Si—N, C—N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing（RTA） processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy（AFM）, X-ray diffractometry（XRD）, Fourier transform infrared transmission（FTIR） and four-point probe（FPP） analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si--C, Si--N, C--N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.

关 键 词：超大规模集成电路 扩散反应 铜互连 制备 SiCN薄膜 阻隔层 X射线衍射 性能 

分 类 号：TG174.4[金属学及工艺—金属表面处理]