基于PD SOI工艺的8Kb抗辐照静态存储器  

The 8Kb Radiation Hardened SRAM Based on the PD SOI Technology

作　　者：刘必慰[1] 陈书明[1] 梁斌[1] 陈川[1] 徐再林[1] 

机构地区：[1]国防科技大学计算机学院,湖南长沙410073

出　　处：《计算机工程与科学》2009年第7期81-84,共4页Computer Engineering & Science

基　　金：教育部高等学校博士学科点专项科研基金资助项目(20079998015)

摘　　要：SOI工艺具有内在的抗辐照能力,因此被广泛地应用于航天、军事等高可靠领域。本文基于我国目前最先进的0.5μm的PD SOI工艺设计了8Kb的SRAM,并且采用体引出、环形栅等多种技术对其进行了抗辐射加固。模拟表明该SRAM的读写时间小于20ns,50MHz下平均功耗小于55.8mW。Because the SOI technology has the intrinsic resistibility to radiation, it has been widely used in the critical applications such as aerospace and military. In this paper, the design of an 8Kb SRAM based on the 0. 5/2m PD SOl technology is described. The SRAM is hardened by several methods, such as body tie, edgeless gate, etc. The simulation results show the read and the write time is less than 20ns, and the average power is less than 55.8mW at 50MHz.

关 键 词：抗辐照 PD SOI 静态存储器 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]