TFT_LCD驱动芯片GATE/SOURCE静电保护电路设计与实现  

Design & Implement of GATE/SOURCE Pad ESD Protection in TFT_LCD Driver IC

作　　者：唐建东[1] 

机构地区：[1]深圳职业技术学院,广东深圳518055

出　　处：《电子质量》2009年第6期74-76,共3页Electronics Quality

摘　　要：文章描述了TFT_LCD驱动芯片防静电(ESD)保护电路的布局,重点分析和设计了TFT_LCD驱动芯片GATE和SOURCE引脚的ESD保护电路。ESD保护电路布局上,采用两排ESD电路错开呈"品字形"排列,使ESD电流均匀流通。在GATE保护电路中,采用二极管接法代替通用PMOS,防止电路产生Latch-up效应。SOURCE的保护电路中,NMOS的Drain设计了RPO(Resist Protection Oxide),使流经Drain的电流均匀分散,使二次击穿电压升高。This paper describes the layout of TFT_LCD driver IC＇s ESD protection. It mainly analyzes and designs ESD protection for GATE ＆ SOURCE pin in TF3- LCD driver IC. It is adopted that triangle-shaped arrangement In two line ESD circuit is adopted to make the electric current pass equably. In the GATE protected circuit, voltage diode replace PMOS, avoid produce Latch-up phenomena. In the SOURCE protected circuit, Drain of NMOS adapted RPO design that make the current through Drain separated equably, The second breakdown voltage of NMOS is raised.

关 键 词：TFT_LCD驱动芯片 ESD保护 击穿电压 

分 类 号：TN141.9[电子电信—物理电子学]