采用不同反应气源制备的Si_3N_4薄膜的特性比较  

Comparision of Si_3N_4 Films Deposited by LPCVD with Different Reaction Gases

作　　者：张故万[1] 宋爱民[2] 雷仁方[1] 高燕[1] 罗春林[1] 伍明娟[1] 

机构地区：[1]重庆光电技术研究所,重庆400060 [2]重庆教育学院,重庆400067

出　　处：《半导体光电》2009年第3期408-410,共3页Semiconductor Optoelectronics

摘　　要：采用低压化学气相淀积系统,分别采用硅烷和二氯二氢硅作为反应气体源与氨气反应,制备了S3N4薄膜,并对其特性进行了比较。实验结果表明,采用二氯二氢硅源与氨气反应制备的薄膜特性优于另一种气源。讨论了使用硅烷和二氯二氢硅源分别制备Si3N4薄膜的优缺点。By using the reactions of SiH4 and SiH2Cl2 with NH3, Si3N4 films were deposited by LPCVD. Carried out is a comparision of the characteristics of Si3N4 films deposited by the two processes, of which the advantages and disadvantages are discussed. Experimental results show that films fabricated by the reaction of Sill2 Clz with NH3 are much better than those fabricated from the other process.

关 键 词：低压化学气相淀积 Si3N4薄膜 硅烷 二氯二氢硅 

分 类 号：TN304[电子电信—物理电子学]