微波ECR磁控溅射制备SiN_x薄膜的XPS结构研究  

An XPS study on the structure of SiN_x film deposited by microwave ECR magnetron sputtering

作　　者：丁万昱[1,2] 徐军[2] 陆文琪[2] 邓新绿[2] 董闯[2] 

机构地区：[1]大连交通大学光电材料与器件研究所,大连116028 [2]大连理工大学三束材料改性国家重点实验室,大连116024

出　　处：《物理学报》2009年第6期4109-4116,共8页Acta Physica Sinica

基　　金：国家自然科学基金重大项目(批准号:50390060);国家自然科学基金(批准号:60576022;50572012)资助的课题~~

摘　　要：利用微波电子回旋共振等离子体增强非平衡磁控溅射法在不同N2流量下制备无氢SiNx薄膜.通过X光电子能谱、纳米硬度仪等表征技术,研究了不同N2流量下制备的SiNx薄膜的化学键结构、化学键含量、元素配比及各元素沿深度分布.研究结果表明,N2流量是影响SiNx薄膜化学键结构、元素配比、元素延深度分布等性质的主要因素.在N2流量为1sccm的条件下制备的SiNx薄膜呈富Si态;在N2流量为2sccm的条件下制备的SiNx薄膜中Si—N键含量最高,可达到94.8%,化学吸附主要发生在薄膜表面,同时薄膜具有较好的机械性能,硬度值可达到22.9GPa;在N2流量为20sccm条件下制备的SiNx薄膜,薄膜表面含有46.8%的N—Si—O键及18.6%的Si—O键结构,薄膜内部含有36.8%的N—Si—O键及12.5%的Si—O键结构,表明薄膜结构疏松,在空气中易被氧化,化学吸附在薄膜表面及内部同时发生,因此薄膜具有较差的机械性能,硬度值仅为12GPa.Hydrogen-free SiNx films were deposited at N2 flow rate ranging from 1 sccm to 20 sccm by microwave electron cyclotron resonance plasma enhanced unbalance magnetron sputtering system. We studied the influence of N2 flow rate on the structural characteristics of deposited films in chemical structure, stoichiometry, composition at different depths in film, and hardness by using X-ray photoelectron spectroscopy and nano-indantation. The results indicate that the films deposited at low N2 flow rate are Si-rich structure. The films deposited at 2 sccm N2 flow rate show an excellent stoichiometry with 94.8% Si--N bond content and uniformity of composition in different depths. At the same time, the films display the highest hardness value of 22.9 GPa. The films deposited at high N2 flow rate contain too much N--Si--O bond and Si--O bond, which is caused by chemical absorption both on and in film in atmosphere. The films present N-rich structure. In this situation, the films display poor mechanical properties with hardness of only 12 GPa.

关 键 词：SINX 磁控溅射 XPS 化学键结构 

分 类 号：O484[理学—固体物理]