掺铒Si/Al2O3多层结构中结晶形态对1.54μm发光的影响  

Influence of Si crystallization evolution on 1.54 μm luminescence in Er-doped Si/Al_2O_3 multilayer

作　　者：王军转[1] 石卓琼[1] 娄昊楠[2] 章新栾[1] 左则文[1] 濮林[1] 马恩[3] 张荣[1] 郑有炓[1] 陆昉[2] 施毅[1] 

机构地区：[1]南京大学物理系,江苏省光电功能材料重点实验室,南京210093 [2]复旦大学物理系,上海200433 [3]中国科学院福建物质结构研究所,福州350002

出　　处：《物理学报》2009年第6期4243-4248,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10574062,90606021)资助的课题~~

摘　　要：利用脉冲激光沉积的方法制备掺铒Si/Al2O3多层结构薄膜,获得了由纳米结构的Si作为感光剂增强的Er3+在1.54μm高效发光.利用拉曼散射、高分辨透射电镜和光致发光测量研究了在不同退火温度下(600—1000℃)纳米结构Si层的结晶形态变化,及对Er3+在1.54μm的发光的影响特征.研究发现最佳发光是在退火温度600—700℃.在这个条件下纳米Si的尺寸和密度,Si和Er的作用距离以及Er3+发光的化学环境得到了优化.进一步,光致发光瞬态衰减谱研究表明,当纳米Si尺寸小时,衰减遵循单指数模式(慢过程),当纳米Si尺寸大时,衰减遵循双指数模式(快过程和慢过程),其中衰减中快过程来自类体Si的对激发态Er3+去激发过程,慢过程对应典型的纳米Si体系衰减过程.The crystallization evolution of the nanostructured Si （ns-Si） in the Er-doped Si/Al2O3 multilayer fabricated by using pulsed laser deposition technique and its effects on the Er^3＋ luminescence at 1.54 um are investigated. Raman scattering and transmission electron microscopy measurements are used to characterize the microstructure evolution of the ns-Si during annealing treatment processes. The maximum photoluminescence intensity is obtained in the sample with ultrathin ns-Si sublayers annealed at 600--700℃, where the density, the size of Si nanocrystals, the interaction distance, and the optimized local environment for effectively activating the Er^3＋ are well controlled. From the analysis of the decay process of time-dependent luminescence, two decay channels are considered, the fast and slow decay channels. The bulk-like Si is responsible for the fast process and the Si nanocrystals are responsible for the slow decay process.

关 键 词：铒 纳米硅 能量转移 氧化铝 

分 类 号：TB383.2[一般工业技术—材料科学与工程]