TiN薄膜的合成及其性能研究  

SYNTHESIS OF TiN FILM BY ION BEAM ENHANCED DEPOSITION AND ITS PROPERTIES

作　　者：周建坤[1] 柳襄怀[2] 陈酉善 王曦[1] 郑志宏[1] 黄巍[1] 邹世昌[1] 

机构地区：[1]中国科学院上海冶金研究所 [2]中国科学院上海冶金研究所离子束开放研究实验室,副研究员上海200050

出　　处：《金属学报》1990年第2期B130-B135,共6页Acta Metallurgica Sinica

摘　　要：用电子束蒸发沉积钛和40keV氮离子束轰击交替进行的办法合成了TiN薄膜。用RBS,AES,TEM,XPS,和X射线衍射研究TiN薄膜的组分和结构表明:用离子束增强沉积制备的TiN薄膜主要由TiN相构成;晶粒大小为30—40um,无择优取向;而非离子束轰击沉积的薄膜则是无定形的;用离子束增强沉积制备的TiN薄膜,其氧含量明显小于无离子束轰击薄膜的值;在TiN薄膜和衬底之间存在一个界面混合区,厚度为40um左右。机械性能测试表明,TiN薄膜具有高的显微硬度,低的摩擦系数。The TiN film was synthesized by alternate deposition of Ti and nitro-gen ion bombardment under 40 keV at room temperature. The component depthprofiles and the structure of the film have been investigated by means of RBS,AES, TEM, XPS and X-ray diffraction. The results showed that the TiN films syn-thesized by ion beam enhanced deposition (IBED) are mainly composed of TiNcrystallites, sized about 30-40 nm, with random orientation. The oxygen contaminationin TiN film prepared by IBED is less than that of the deposited film without nitrogenion bombardment. It was confirmed that there is a significant intermixed layer, about40nm thick, at the interfaces. The films formed by IBED exhibit superior hardnessand improvement over the wear resistance and frictiton properties.

关 键 词：TIN膜 薄膜 合成 离子束 沉积 

分 类 号：TG174.44[金属学及工艺—金属表面处理]