超快速高压雪崩三极管器件研制  

Development of Ultrafast High Voltage Avalance Transistors

作　　者：刘忠山[1] 杨勇[1] 马红梅[1] 刘英坤[1] 崔占东[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2009年第6期379-382,共4页Micronanoelectronic Technology

摘　　要：采用雪崩三极管MARX电路易产生亚纳秒导通前沿的高功率微波脉冲,可应用于激光LED驱动、超快脉冲前沿发生器和高速脉冲发生器等。介绍了雪崩三极管器件的工作原理及设计方法,采用针对雪崩模式工作的npn晶体管的特殊工艺设计,研制出了耐压400V,脉冲电流达80A的雪崩三极管器件并已投入批量生产。给出了雪崩三极管MARX使用电路及测试结果,重复频率可达400kHz。器件采用金属管壳片式封装,具有可靠性高、易于级联使用等优点。The high power microwave pulse with the sub-nanosecond rise time can be produced easily in MARX circuits based on avalanche transistors. This avalanche transistor can used in the laser LED driver, sharp rise-time pulse generator, high speed pulse generator and so on. The working principle and design method of avalanche transistors were introduced. Based on the avalanche mode of the npn transistor, an avalanche transistor was successfully manufactured by using the special fabrication design and technology. The breakdown voltage of 400 V and pulse current of 80 A were obtained and the avalanche transistors were produced in batch. The test resuits and the MARX application circuit of the avalanche transistor were presented. The repeat frequency 400 Hz was obtained. The metal hermetic packaged device has high reliability and can be easily parallel connected.

关 键 词：雪崩三极管 二次击穿 负阻 MARX电路 超宽带 

分 类 号：TN323.2[电子电信—物理电子学] TN323.4