施主能级分裂对SiC基p-MOSFET反型层电荷的影响  

The Influence of the Valley-orbit Splitting on Inversion-layer Charge of SiC Based p-MOSFET

作　　者：戴振清[1] 郝爱民[1] 杨瑞霞[2] 

机构地区：[1]河北科技师范学院数理系,河北秦皇岛066600 [2]河北工业大学信息工程学院,天津300401

出　　处：《固体电子学研究与进展》2009年第2期187-191,共5页Research & Progress of SSE

摘　　要：通过引进基态施主能级分裂因素,对SiC基p-MOSFET的反型层电荷模型进行了改进。经计算发现,在考虑到能级分裂后反型层电荷面密度降低,并且能级分裂的影响随栅电压绝对值的增加而减弱。在阈值电压处,能级分裂对反型层电荷的影响随掺杂浓度的增加而增强,随温度的提高而减弱,同时也与杂质能级深度相关。在能级分裂影响下阈值电压的绝对值增加,不过增量较小。The valley-orbit splitting is introduced into the inversion-layer charge model for silicon carbide based p-MOSFET. It is found that the present model predicts lower inversion-layer charge density. The influence of the valley splitting on the inversion-layer charge density gets higher with the gate voltage rising. At the threshold voltage, the influence increases and decreases with increasing of the doping concentration and the temperature, respectively and relates to the donor level. The absolute value of threshold voltage has a small increment when considering the valley-orbit splitting.

关 键 词：基态施主能级分裂 碳化硅 金属氧化物半导体场效应晶体管 反型层电荷 

分 类 号：TN386.1[电子电信—物理电子学]