低压等离子体增强化学汽相沉积法制备立方氮化碳薄膜  

PREPARATION OF CUBIC C 3N 4 THIN FILMS BY LOW PRESSURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION *

作　　者：张志宏[1] 郭怀喜[1] 余非为 熊启华 叶明生[1] 范湘军[1] 

机构地区：[1]武汉大学物理系

出　　处：《物理学报》1998年第6期1047-1051,共5页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：用低压等离子体增强化学汽相沉积法和氮化硅中间过渡层的方法，在硅片和玻璃上，制备了立方氮化碳薄膜．用光电子能谱测试了其成分和结合能，薄膜含氮量为４２９６％．Ｃ１ｓ和Ｎ１ｓ的结合能分别为２８５０１和３９８６０ｅＶ．透射电子显微镜研究表明，制备的氮化碳属于体心立方结构，根据衍射花样，计算的晶格常量ａ为０５３６ｎｍ，这与理论预言的结果ａ为０５３９７３ｎｍ很接近．随着沉积的时间增长，还观测到了氮化碳薄膜的菊池花样．在玻璃上沉积的氮化碳薄膜在可见光和近红外区域是透明的，在４００ｎｍ处有光吸收．Abstract ? Cubic C 3N 4 was synthesized on glass and silicon wafers by using low pressure plasma enhanced chemical vapor deposition and silicon nitride interlayer technology.The crystalline structure was investigated by transmission electron microscopy (TEM),and this material has body centered cubic symmetrical structure.The lattice parameter a =0.536 nm determined by TEM is comparable to theoretical data 0 53973nm.The C1s and N1s binding energies are 285 01 and 398 60eV respectively,and the nitrogen content of the film is up to 42 96%,determined by X ray photoelectron spectroscopy (XPS).The thin films on glass are transparent to light in the visible and near infrared region,and at 400 nm there appears strong light absorption.

关 键 词：低压 等离子体 薄膜制备 PECVD 立方氮化碳 

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]