利用^4He—O共振散射测量SiOxNy功能梯度薄膜中氧的深度分布  

Depth Profile of Oxygen in SiO_xN_y Functional Gradient Thin Film Using 4 He O Resonance Scattering

作　　者：於伟峰[1] 张伟[1] 包宗明[1] 周筑颖 伍怀龙 

机构地区：[1]复旦大学电子工程系

出　　处：《功能材料》1998年第4期405-407,共3页Journal of Functional Materials

基　　金：国家自然科学基金

摘　　要：利用４Ｈｅ－Ｏ共振散射测量了ＳｉＯｘＮｙ功能梯度薄膜中氧元素的深度分布。测试样品由计算机控制的等离子增强化学汽相淀积（ＰＥＣＶＤ）方法制备，所用的反应气体是ＳｉＨ４（由Ｎ２稀释至１５％），Ｎ２Ｏ和ＮＨ３。测试结果表明，用作Ｒｕｇａｔｅ滤波器涂层样品中的氧元素组份明显呈周期性分布，这为验证涂层折射率在深度方向周期性变化提供了又一重要依据。同时，证实了这一测量方法对膜中轻元素氧的检测是十分有效的。The functional gradient material (FGM) was deposited by plasma enhanced chemical vapor deposition (PECVD) controlled by computer. The depth profile of oxygen in FGM SiO xN y has been measured using 4 He O resonance scattering. The result show that the oxygen compositions vary with depth cyclically.It has been provided another important basis for testing and verifying the refractive index varied with depth cyclically in the sample and verified that the measurement method is quite effective for testing the oxygen composition in the films.

关 键 词：功能梯度材料 薄膜测量 共振散射 氮氧化硅 

分 类 号：O484.5[理学—固体物理]