沉积压力对磁控溅射纳米硅薄膜结构和性能影响  

Effects of Deposition Pressure on Nanocrystalline Silicon Thin Film by Magnetron Sputtering

作　　者：于军[1] 王晓晶[1,2] 雷青松[1] 彭刚[1] 徐玮[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074 [2]湖北省光伏工程技术研究中心,武汉430074

出　　处：《人工晶体学报》2009年第3期556-560,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金重大资助项目(No.90407023)

摘　　要：采用射频（RF）磁控溅射方法在玻璃衬底上制备了氢化纳米硅薄膜,研究了沉积压力（4-9 Pa）对薄膜结构和性能的影响。利用XRD、SEM、紫外-可见光分光光度计、傅立叶红外吸收光谱仪（FT-IR）及四探针电阻测试仪等对薄膜结构和性能进行了表征。结果表明：随着沉积压力的提高,薄膜结晶程度逐渐变差,晶粒尺寸降低;薄膜光学带隙在2.04-2.3 eV之间,且随着沉积压力的提高而增加;薄膜具有SiH、SiO、SiH2和SiH3振动吸收峰,随着沉积压力的增加,SiH、SiH2振动吸收峰向高波数移动,薄膜方块电阻在132-96Ω/□,且随着沉积压力的升高而降低。nc-Si： H thin films were prepared on glass by RF magnetron sputtering technique. Effects of deposition pressure on structure and properties of thin film were investigated using XRD, SEM, UV-Vis spectrometer and FT-IR four-probe resistivity meter. XRD and SEM results show an improvement of the crystallinity and grain size of the films with decreasing deposition pressure and the optical band gap of the films ranged from 2.3 eV to 2.04 eV as the depositon pressure was increased ; FT-IR measurement shows that SiH,SiO,SiH2 and SiH3 vibrational absorption peak occurred in the films and SiH,SiH2 absorption peak moved to higher wavenumber along with higher pressure; square resistivity was decreased （132-96Ω/□） when depositon pressure enhanced.

关 键 词：氢化纳米硅 磁控溅射 沉积压力 光学带隙 

分 类 号：O484[理学—固体物理]