Influence of O_2/Ar ratio on the properties of transparent conductive niobium-doped ZnO films  

作　　者：CAO Feng WANG YiDing LIU KuiXue YIN JingZhi LONG BeiHong LI Li ZHANG Yu CHEN XiaMei 

机构地区：[1]State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun130012, China

出　　处：《Chinese Science Bulletin》2009年第13期2217-2220,共4页

基　　金：Supported by the High-Tech Research and Development Program of China(Grant Nos.2007AA06Z112,2007AA03Z446);Research Fund for the Doctoral Program of Higher Education of China(Grant No.20060183030);Science and Technology Office of Jilin Province(Grant No.20070709);Bureau of Science and Technology of Changchun City(Grant No.2007107)

摘　　要：Niobium-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300℃.The influence of O2/Ar ratio on the structural,electrical and optical properties of the as-deposited films is investigated by X-ray diffraction,Hall measurement and optical transmission spectroscopy.The lowest resistivity of 4.0×10-4Ω·cm is obtained from the film deposited at the O2/Ar ratio of 1/12.The average optical transmittance of the films is over 90%.Niobium-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300℃. The influence of O2/Ar ratio on the structural, electrical and optical properties of the as-deposited films is investigated by X-ray diffraction, Hall measurement and optical transmission spectroscopy. The lowest resistivity of 4.0×10^-4Ω· cm is obtained from the film deposited at the O2/Ar ratio of 1/12. The average optical transmittance of the films is over 90%.

关 键 词：ZNO薄膜 透明导电 光学性能 铌掺杂 Hall测量 射频溅射 玻璃基板 薄膜沉积 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055