ZnTe(110)表面电子态及其弛豫对表面电子态的影响  

INFLUENCE OF RELAXATION ON THE SURFACE ELECTRONIC STATES OF ZnTe(110)

作　　者：马丙现[1] 贾瑜[1] 范希庆[1] 

机构地区：[1]郑州大学物理工程学院

出　　处：《物理学报》1998年第6期970-977,共8页Acta Physica Sinica

摘　　要：给出了ⅡⅥ族半导体化合物ＺｎＴｅ（１１０）表面电子特性的理论研究．考虑最近邻的ｓｐ３ｓ模型描述体态电子结构，使用散射理论方法，给出了理想和弛豫ＺｎＴｅ（１１０）表面的波矢分辨的电子态密度和表面投影带结构．结果表明：弛豫的ＺｎＴｅ（１１０）表面在带隙中没有表面态存在．在价带中的表面态及表面共振态和其他弛豫的ⅢⅤ族及ⅡⅥ族半导体的（１１０）表面具有相似的特征．与实验结果及第一性原理的自洽赝势计算结果相比。Abstract The results of a theoretical study of the electronic structure of the Ⅱ Ⅵ compound ZnTe are presented. The bulk electronic structure is described by the nearest neighbor tight binding formalism. Using the scattering theory method, we have obtained wavevector resolved surface densities of states and the surface band structure. There are no surface states in the gap. Surface states and resonances in the valence band and conduction band regions show resemblance with those of relaxed(110) surface of Ⅲ Ⅴ compounds and the Ⅱ Ⅵ compounds. The results are in good agreement with other theoretical studies.

关 键 词：碲化锌 表面电子结构 电子态 弛豫 

分 类 号：TN304.22[电子电信—物理电子学] O471[理学—半导体物理]