financially supported by the National Natural Science Foundation of China (61774033)。
Interface engineering is a strategy to boost intrinsic catalytic activities.Defect introduction,composition regulation,and heterostructure engineering are commonly used interface modification methods[1,2].Oxygen vacan...
采用第一性原理对3C-Si C块体和3C-Si C(111)、(110)和(100)三个表面的电子结构和光学性质进行理论计算。计算结果表明:3C-Si C块体是带隙为1.44 e V的G-M间接带隙半导体,3C-Si C(111)表面是带隙为2.05 e V的M-G间接带隙半导体,3C-Si C(...
Topological insulators (TI) are a rather new class of materials which offer a great potential for applications in spintronics [1]. Their surface electronic structure is determined by both the particular symmetry and...