赝形In_xGa_(1-x)As/In_(0.52)Al_(0.48)As异质结构中二维电子气的回旋共振光谱研究  

STUDY ON CYCLOTRON RESONANCE SPECTRA OF TWO DIMENSIONAL ELECTRON GASES IN PSEUDOMORPHIC In x Ga 1- x As/In 0 52 Al 0 48 As HETEROJUNCTIONS

作　　者：陈张海[1,2] 胡灿明[1,2] 陈建新 史国良[1,2] 刘普霖[1,2] 沈学础 李爱珍[1,2] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室 [2]中国科学院上海冶金研究所信息功能材料国家重点实验室

出　　处：《物理学报》1998年第6期1018-1025,共8页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：采用回旋共振光谱方法，同时获得了具有较高电子气浓度的赝形Ｉｎ０８０Ｇａ０２０Ａｓ／Ｉｎ０５３Ｇａ０４７Ａｓ／Ｉｎ０５２Ａｌ０４８ＡｓＨＥＭＴ结构中最低两个子能带的费密面附近电子有效质量、散射时间和迁移率．观察到该系统中能带非抛物性和波函数穿透所导致的电子回旋有效质量的显著增大效应。Abstract The electron effective masses, scattering time and mobilities near the Fermi level for the lowest two subbands of the two dimensional electron gases in a pseudomorphic In 0 80 Ga 0 20 As/ In 0 53 Ga 0 47 As /In 0 52 Al 0 48 AsHEMT structure are determined by fitting the cyclotron resonance spectra. The significant enhancement of the electron effective masses, resulting from the conduction band nonparabolicity and the wave function penetration, is observed. The evident subband dependencies of the electron scattering time and mobilities dominated by the alloy scattering and ionized impurities scattering are also discussed.

关 键 词：铟镓砷 铟铝砷 电子气 异质结构 回旋共振光谱 

分 类 号：TN304.26[电子电信—物理电子学] O471[理学—半导体物理]