Ge_xSi_(1-x)/Si应变超晶格PIN探测器的研制  

Design and Fabrication of GeSi/Si Strained Layer Superlattice Waveguide PIN Photodetectors at λ =1.3μm

作　　者：万建军[1] 李国正[1] 李娜[1] 许雪林[1] 刘恩科[1] 

机构地区：[1]西安交通大学微电子工程系

出　　处：《Journal of Semiconductors》1998年第8期597-602,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文对ＧｅｘＳｉ１－ｘ／Ｓｉ应变超晶格ＰＩＮ探测器进行了分析和设计（其中ｘ＝０．６），并制作出了相应的器件．对典型器件的测试结果表明，在１．３μｍ光照下，反偏电压为－５Ｖ时，光响应电流为２．６μＡ，暗电流为４００ｎＡ，探测灵敏度为０．１５３μＡ／μＷ．最大总量子效率为１４．２％．Abstract We have designed and fabricated Ge x Si 1- x /Si strained layer superlattice(SLS) photodetectors integrated with Si epitaxial waveguides.It is exhibited that at 5V reverse bias the maximum photocurrent is 2 6μA, the minimum dark current and the minimum dark current density are 400nA and 10 -3 A/cm 2, respectively. It is also measured that the overall quantum efficiency is 14.2%.

关 键 词：硅 硅化锗 应变超晶格 PIN控制器 

分 类 号：TN382[电子电信—物理电子学] TN304.25