CVD金刚石膜等离子体弧抛光的机理研究  

The Research about Mechanism of Plasma arc Polishing CVD Diamond Films

作　　者：王帅强[1] 武文斌[1] 张峻岭[1] 周淑娟[1] 

机构地区：[1]河南工业大学机电工程学院,郑州450007

出　　处：《机械工程师》2009年第7期25-27,共3页Mechanical Engineer

摘　　要：提出了一种利用等离子体弧抛光CVD金刚石膜的新工艺。通过试验,对其抛光机理作了初步探讨,并对试样进行了实际抛光。结果表明,用等离子体弧加工金刚石膜确实具有抛光效果。粗糙度的降低可以认为有两种机制:一种是熔点以下的氧化刻蚀、石墨化、石墨氧化和溅射,石墨化是关键的因素;另一种是熔点以上的熔化流动、爆炸抛出和弧柱的吹力作用。The new technology of Plasma arc polishing CVD diamond films was presented in this paper. Through the test, its polishing mechanism was discussed elementarily, and the sample was polished in accordance with the real situation. The results showed that plasma arc polishing CVD diamond films is feasible indeed. The reduction of surface roughness is due to the following two mechanisms： Below the melting point, it is oxide etching, graphitization, graphite oxide and sputtering, graphitization is the key factors; the other one is the melt flow, explosion and wind force of are column, when the temperature of membrane surface is lower than the melting point.

关 键 词：金刚石膜 CVD 等离子体弧 抛光 石墨化 

分 类 号：TG664[金属学及工艺—金属切削加工及机床]