基于InGaAs/InP SHBT技术的10Gb/s单片跨阻放大器研究  

Investigation of 10 Gb/s Monolithic TIA Based on InGaAs/InP SHBT Technology

作　　者：蔡道民[1,2] 李献杰[1] 赵永林[1] 曾庆明[1] 刘跳[1] 郝跃[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]西安电子科技大学微电子学院,西安710071

出　　处：《半导体技术》2009年第7期701-703,共3页Semiconductor Technology

摘　　要：介绍了采用传统的三台面工艺,利用湿法选择腐蚀形成发射极-基极自对准的InGaAs/InP单异质结双极性晶体管(SHBT)技术实现传输速率为10Gb/s跨阻放大器。其中SHBT获得了在Ic=10mA,Vce=2V时,fT和fmax分别为60、75GHz,电流密度为100kA/cm2,击穿电压大于3V;跨阻放大器的跨阻增益为58dBΩ,灵敏度为-23dBm,3dB带宽为8.2GHz。该单片跨阻放大器可广泛应用于光纤通信。The design and realization of a 10 Gb/s transimpedance amplifier were reported based on base-emitter self-align and InGaAs/InP SHBT triple mask process, fmax is about 75 GHz with fT of 60 GHz for 2 μm × 10 μm emitter area devices at Ic = 10 mA and Vce = 2 V, while BVceo 〉 3 V. More than 58 dBΩ gain of the transimpedance amplifier is achieved, the sensitivity is less than - 23 dBm, and 3 dB bandwith to 8.2 GHz. The amplifier can be widely used in fiber communication.

关 键 词：单异质结双极性晶体管 发射极-基极自对准 隔离基极压点 跨阻放大器 

分 类 号：TN32[电子电信—物理电子学] TN722