硅基PZT热释电薄膜三方-四方相变的拉曼散射研究  

Raman Scattering Studies on PZT Thin Films for Trigonal and Tetragonal Phase Transition

作　　者：李珺泓[1] 薛晨阳[1] 梁庭[1] 丑修建[1] 谭秋林[1] 张琼[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,仪器科学与动态测试教育部重点实验室,山西太原030051

出　　处：《纳米科技》2009年第3期54-57,共4页

基　　金：国家863重大项目（项目编号：2006AA040601）、电子测试技术国家级重点实验室开放基金、微米纳米加工技术国家级重点实验室开放基金

摘　　要：采用溶胶-凝胶法在硅衬底上成功制备出厚度约200nm的PZT薄膜,并以差热实验为基础,分别采用600℃、650℃和700℃三种退火温度,并对不同温度下的薄膜进行拉曼测试,分析三方-四方相变趋势,研究结果表明,中频区域的A1（2TO）振动模作为四方的一个标志,随着退火温度的升高强度逐渐增强,三方向四方转变;高频范围的A1（3TO）T振动模随着退火温度的升高强度也在逐渐增强,三方晶胞在减少而四方晶胞在增多,即随着退火温度的升高,三方有向四方转变的趋势。PZT thin films were successfully prepared through sol-gel. And three annealing temperature： 600℃ ,650℃, 700℃ was confirmed through DTA analyzing, and gave the film raman test in different temperature. The trigonal and tetragonal phage transition were analyzed through raman scattering. The intensity of A1 （3TO）T mode was enhanced with the increasing of annealing temperature. The trigonal was decreased while the tetragonal was increased. The concluding were obtained that trigonal were turned to tetragonal when temperature increased.

关 键 词：PZT 拉曼散射 相变 

分 类 号：O484.5[理学—固体物理]