铒离子注入晶体硅的射程分布和离散研究  

Measurement of the range distribution and straggling of Er ions implanted in Si crystal

作　　者：秦希峰[1] 季燕菊[1] 王凤翔[1] 付刚[1] 赵优美[1] 

机构地区：[1]山东建筑大学理学院,山东济南250101

出　　处：《山东建筑大学学报》2009年第3期212-214,共3页Journal of Shandong Jianzhu University

基　　金：山东省中青年科学家科研奖励基金项目(2006BSB01447);山东建筑大学校内基金项目(XN070109)

摘　　要：用400 keV能量的铒离子垂直注入晶体硅(Si)样品中。利用卢瑟福背散射技术研究了能量为400 keV、剂量为5×1015ions/cm2的铒离子注入Si晶体的平均投影射程、射程离散和深度分布。测出的实验值和TRIM 98得到的理论模拟值进行了比较,发现实验值跟TRIM 98模拟计算的理论值符合较好。Er ions with the energy of 400 keV were implanted vertically in Si crystal sample. The pro-jected range, the range straggling, and the depth distribution for 400 keV Er ions implanted in Si crystal with a dope of 5× 10^15 ions/cm^2 were studied by Rutherford backseattering technique. The experimental results were compared with the theoretical values simulated by TRIM＇98, and a good agreement was observed.

关 键 词：离子注入 卢瑟福背散射技术 射程分布 

分 类 号：O471.4[理学—半导体物理]