长波双色Al_xGa_(1-x)As/GaAs量子阱红外探测器的研制  

Development of a Long Wavelength Two-Color Al_xGa_(1-x)As/GaAs Quantum Well Infrared Photo-Detector

作　　者：齐利芳[1] 李献杰[1] 赵永林[1] 尹顺政[1] 蔡道民[1] 李宁[2] 甄红楼[2] 熊大元[2] 陆卫[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]中国科学院上海技术物理研究所,上海200083

出　　处：《微纳电子技术》2009年第7期396-399,共4页Micronanoelectronic Technology

摘　　要：介绍了长波双色AlxGa1-xAs/GaAs多量子阱红外探测器单元的设计、制作和测试。器件光敏面面积为300μm×300μm,光吸收峰值波长分别为10.8、11.6μm;采用垂直入射光耦合的工作模式,65K温度2V偏压下,两个多量子阱区的暗电流分别为4.23×10-6、4.19×10-6A;黑体探测率分别为1.5×109、6.7×109cm.Hz1/2/W;响应率分别为0.063、0.282A/W。GaAs基量子阱红外探测器(QWIP)材料生长和加工工艺成熟、大面积均匀性好、成本低、不同波段之间的光学串音小,使得AlGaAs/GaAsQWIP在制作多色大面阵方面具有明显的优势。The design,processing and measurement for a long wavelength two-color AlxGa1-xAs/GaAs quantum well infrared photo-detector were described.The unit structure of the photo-detector is 300 μm×300 μm.The peaks of the responsivity spectra are 10.8 μm and 11.6 μm.Using the vertical incident light,the measured dark currents of the two multi-quantum-well zones are 4.23×10^-6,4.19×10^-6A with a bias voltage of 2 V at 65 K,respectively.The blackbody detectivities are 1.5×10^9,6.7×10^9 cm·Hz^1/2/W and the responsivities are 0.063,0.282 A/W,respectively.The AlGaAs/GaAs quantum well infrared photo-detector（QWIP）has obvious advantages in developing a large format and multiple color focal plane array due to the mature GaAs material growth and process technology,good uniformity,low cost and small optics crosstalk between the different wave bands.

关 键 词：量子阱 红外探测器 双色 双周期光栅 长波 

分 类 号：TN362[电子电信—物理电子学]