真空气相沉积可控制备有机半导体单晶薄膜  

CONTROLLED GROWTH OF SEMICONDUCTOR SINGLE CRYSTALS BY VACUUM VAPOR DEPOSITON

作　　者：巫国平[1] 白桦[1] 岳永豪[1] 高非[1] 熊玉卿[2] 郭云[3] 许主国[1] 

机构地区：[1]兰州大学化学与化工学院,功能有机分子化学国家重点实验室,甘肃兰州730000 [2]兰州物理研究所,表面工程技术国家级重点实验室,甘肃兰州730000 [3]兰州物理研究所,真空低温技术与物理国家级重点实验室,甘肃兰州730000

出　　处：《真空与低温》2009年第2期86-89,共4页Vacuum and Cryogenics

基　　金：表面工程技术国家级重点实验室基金(9140C5401030701)资助。

摘　　要：利用多温区温度可控的真空气相沉积设备,在热氧化硅片衬底上沉积了并五苯(PEN)与甲氧基寡聚苯乙烯撑(MOPV)2种有机半导体材料的薄膜。研究了不同的沉积条件下有机半导体材料在二氧化硅衬底上的成核和生长模式。MOPV的生长遵循Volmer-Weber模式。在理想的条件下分别得到了岛状与线状的单晶结构。偏振显微荧光研究证明单晶纳米线有显著的荧光各向异性。The single crystals of two organic semiconductor, pentacene （PEN） and methoxyloligo- phenylenevinylene （MOPV）, have been prepared on SiO2/Si substrate by vacuum vapor deposition. The deposition was carried out in a vacuum system with multiple heating zones and controlled gas inlet. The shape of PEN and MOPV crystals are strongly dependent on the deposition condition and flake and line shape crystals were successfully obtained under optimized conditions. The growth of MOPV crystals followed Volmer-Weber model. Strong fluorescence anisotropy was observed on the MOPV nanofibers by polarizer fluorescence microscope.

关 键 词：真空沉积 有机半导体 薄膜 单晶 纳米线 

分 类 号：TN305.8[电子电信—物理电子学]