反射式变掺杂GaAs光电阴极量子效率模型研究  

Study on the model of quantum efficiency of reflective varied doping GaAs photocathode

作　　者：牛军[1,2] 杨智[1] 常本康[1] 乔建良[1,2] 张益军[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,南京210094 [2]南阳理工学院电子与电气工程系,南阳473004

出　　处：《物理学报》2009年第7期5002-5006,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60678043);高等学校博士学科点专项科研基金(批准号:20050288010)资助的课题~~

摘　　要：借助指数掺杂与均匀掺杂光电阴极的量子效率公式,提出了采用加权平均法表示的反射式变掺杂光电阴极量子效率理论模型.使用该模型对某掺杂结构的反射式GaAs光电阴极量子效率曲线进行了拟合,获得了最佳的拟合效果,且模型的拟合结果能够定量地揭示材料的变掺杂结构,在不同入射光波段对阴极量子效率的贡献不相同这一现象.针对此现象进行了深入地分析和探讨.The theoretical model of quantum efficiency of the reflective varied doping GaAs photocathode is proposed, which adopts the weighted mean method based on the quantum efficiency formula of exponential doping and uniform doping photocathode. By this model the quantum efficiency curves of a reflective GaAs photocathode under varied doping structure have been fit and we obtained the precise best fit in different incident photon wavehands. The phenomena that the contributions of doping structures to the cathode quantum efficiency are different was discovered. This phenomena has been analysed and discussed detailedly in the paper.

关 键 词：GAAS 变掺杂 光电阴极 量子效率 

分 类 号：O474[理学—半导体物理]