PET纤维基AZO透明导电薄膜溅射工艺参数的优化  

Deposition of Al Oxide-Doped ZnO Films on Substrates of Polythylene Terephthalate Nonwovens

作　　者：赵绍英[1] 邓炳耀[1] 高卫东[1] 魏取福[1] 

机构地区：[1]江南大学生态纺织教育部重点实验室,无锡214122

出　　处：《真空科学与技术学报》2009年第4期419-422,共4页Chinese Journal of Vacuum Science and Technology

基　　金：江苏省自然科学基金(No.BK2008106);江南大学预研基金(No.2008LYY001)资助

摘　　要：室温下,结合正交实验表,用射频磁控溅射在涤纶(PET)非织造布基材上生长AZO(Al2O3:ZnO)纳米结构薄膜。采用四探针测量仪测试AZO薄膜的方块电阻,用原子力显微镜(AFM)分析薄膜微结构;通过正交分析法对实验L9(33)AZO薄膜的性能指标进行分析。实验结果表明:溅射厚度对AZO薄膜导电性能起主导作用,其次为氩气压强和溅射功率;同时,得出制备AZO薄膜的最佳工艺为:溅射功率150W、厚度100m和气压0.2Pa,该参数下样品的方块电阻为1.633×103Ω,AZO纳米颗粒的平均直径约为69.4nm。The aluminum oxide doped, transparent, conductive ZnO （AZO）films were deposited by RF magnetron sputtering at room temperature on substrates of polythylene terephthalate（PET）nonwovens. The microstructures and eletric properties of the AZO films were characterized with atomic force microscopy（AFM）and conventional probes. The influence of the film growth conditions on film growth was studied with mathematical statistical models. The results show that the film thickness affects more strongly the sheet resistance of the film than the argon pressure and sputtering power do. The best AZO films were grown at a sputtering power of 150 W, an argon pressure of 0.2Pa and a film thickness of 100urn. The sheet resistance of the AZO films with an averaged grain size of 69.4 nm was found to be 1. 633 ×10^3Ω.

关 键 词：PET纤维 AZO薄膜 磁控溅射 参数 优化 

分 类 号：TS174.8[轻工技术与工程—纺织材料与纺织品设计]