Controllable growth of dielectric/semiconductor integrated films  

作　　者：LI YangRong ZHU Jun LUO WenBo LIU XingZhao ZHANG WanLi 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu 610054, China

出　　处：《Chinese Science Bulletin》2009年第15期2681-2687,共7页

基　　金：Supported by the State Key Development Program for Basic Research of China (Grant No. 61363Z01);National Natural Science Foundation of China (Grant No. 50772019)

摘　　要：Currently, electronic information systems are developing quickly towards further miniaturization and monolithic integration so as to realize smaller volume, higher velocity and lower power consumption. For this purpose, the integration of all sorts of active devices (mainly fabricated by semiconductors) with passive devices (fabricated by functional materials) is particularly important and impendent. Therefore, it is necessary to integrate multifunctional oxide dielectrics possessing electric, magnetic, acoustic, optical and thermal properties characterized by spontaneous polarization with semiconductors bearing the characters of carrier transportation to form artificial structures via deposition of solid films. This kind of integrated films may have two characters, i.e., the all-in-one multifunction and modulation of electromagnetic properties by hetero-interface. This makes it possible to realize mono-lithic integration of detecting, processing, transmission, executing and storing of electronic information. Meanwhile, possible integrated coupling effects will be pursued instead of exploring the limited physical properties of the related materials. In this paper, we put forward a new direction of developing electronic devices with higher performances, and demonstrate some results concerning our recent research on the interface-controllable integrated growth of dielectrics and GaN. Recent progresses of the related research in the world are also reviewed.Currently, electronic information systems are developing quickly towards further miniaturization and monolithic integration so as to realize smaller volume, higher velocity and lower power consumption. For this purpose, the integration of all sorts of active devices （mainly fabricated by semiconductors） with passive devices （fabricated by functional materials） is particularly important and impendent. Therefore, it is necessary to integrate multifunctional oxide dielectrics possessing electric, magnetic, acoustic, optical and thermal properties characterized by spontaneous polarization with semiconductors bearing the characters of carrier transportation to form artificial structures via deposition of solid films. This kind of integrated films may have two characters, i.e., the all-in-one multifuncUon and modulation of electromagnetic properties by hetero-interface. This makes it possible to realize monolithic integration of detecting, processing, transmission, executing and storing of electronic information. Meanwhile, possible integrated coupling effects will be pursued instead of exploring the limited physical properties of the related materials. In this paper, we put forward a new direction of developing electronic devices with higher performances, and demonstrate some results concerning our recent research on the interface-controllable integrated growth of dielectrics and GaN. Recent progresses of the related research in the world are also reviewed.

关 键 词：半导体集成电路 生长介质 电子信息系统 可控 单片集成 功能材料 电子设备 半导体制造 

分 类 号：TN43[电子电信—微电子学与固体电子学] S317[农业科学—作物栽培与耕作技术]