硅片高温工艺与塑性形变  

ELEVATED TEMPERATURE PROCESS AND PLASTIC DEFORMATION OF SILICON WAFER

作　　者：谢书银[1] 万关良[2] 李立本[3] 张锦心[3] 

机构地区：[1]中南工业大学应用物理与热能工程系 [2]北京有色金属研究总院 [3]浙江大学硅材料国家重点实验室

出　　处：《中国有色金属学报》1998年第2期291-294,共4页The Chinese Journal of Nonferrous Metals

基　　金：硅材料国家重点实验室资助项目

摘　　要：为减小硅片高温工艺中的形变，通过仿硅器件在１２００℃热处理１．５ｈ高温工艺热处理实验，研究了装片方式、升温速率和急冷温度等工艺条件对硅片弯曲度变化的影响，实验结果表明硅片热处理中塑性形变主要是在急冷过程产生的，快速加热对形变影响不大。急冷温度越高，硅片中心与边缘温差越大，因产生位错和滑移形成的塑性形变就越大，１２００℃急冷的弯曲度变化是７７０℃急冷的４倍，水平装片比竖直装片形变大，紧贴式装片比间隔式容易弯曲。采用降低急冷温度，由１２００℃缓慢降至７７０℃左右再急冷，配合竖直间隔方式装片和容器加盖等方法可减少高温工艺中硅片的形变。The effects of elevated temperature process parameters, fashion of placing wafer, elevating temperature rate and fast cooling temperature on the change of bow of silicon wafer were studied by 1 200 ℃ for 1.5 h heat treatment of silicon wafer for decreasing plastic deformation of silicon wafer during high temperature process. The results showed that the fast cooling caused the plastic deformation, and the fast heating did not affect the deformation; the higher the fast cooling temperature and the larger the difference of temperature between the centre and the edge of a silicon wafer, the larger the plastic deformation caused by the dislocation and its slip. The change of bow of silicon wafer cooled at 1 200 ℃ was 4 times that at 770 ℃. Decreasing the fast cooling temperature, covering the vessal and placing the wafers perpendicularly with gap decreased the deformation of the silicon wafer.

关 键 词：硅片 高温工艺 塑性形变 热处理 

分 类 号：TN304.17[电子电信—物理电子学]