VO_x/TiO_x/Ti多层薄膜的制备工艺与内耗研究  

Preparation and internal friction of VO_x/TiO_x/Ti multilayer thin films

作　　者：方广志[1] 李合琴[1] 沈洪雪[1] 宋泽润[2] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009 [2]中国电子科技集团公司43研究所,安徽合肥230022

出　　处：《真空》2009年第4期20-23,共4页Vacuum

基　　金：安徽省红外与低温等离子体重点实验室(2007C002107D)

摘　　要：用磁控反应溅射法在玻璃和钼片衬底上制备VOx/TiOx/Ti多层薄膜。用X射线衍射(XRD)、QJ31单臂电桥、薄膜内耗仪等测试了薄膜的晶体结构、电阻、内耗。分别进行了薄膜的制备工艺与内耗研究。测试分析结果表明:试样的晶体结构、电阻-温度曲线、杨氏模量的突变均表明多层薄膜在66℃左右发生相变。样品的电阻温度系数为-4.35%/℃。并且真空退火有利于二氧化钒相生成。VOx/TiOx/Ti multilayer thin films were deposited on glass and molybdenum substrates by reactive magnetron sputtering process. Their crystal structure, resistance and imternal friction were investigated with X-ray diffraction （XRD）, QJ31 Wheatstone Bridge and an internal friction indicating instrument. Test results showed that a phase transition of multilayer thin films occurs at 66℃, which is revealed by the mutation in crystal structure, relationship between resistance and temperature and Young＇s modulus. The temperature coefficient of resistance of sample is -4.35%/℃, and vacuum annealing benefits the formation of vanadium dioxide phase.

关 键 词：VOx/TFiOx/Ti多层薄膜 磁控反应溅射 电阻温度系数 内耗 

分 类 号：TB43[一般工业技术]