一个带自热效应的新型LDMOS解析模型  

An Innovative Analytical Model for LDMOS with Self-Heating Effects

作　　者：高雯[1] 杨东旭[1] 余志平[1] 

机构地区：[1]清华大学微电子研究所,北京100084

出　　处：《微电子学》2009年第4期536-540,共5页Microelectronics

摘　　要：介绍了一个带自热效应的新型LDMOS解析式模型。通过研究以阈值电压为基础的BSIM3v3模型,增加了对漂移区影响的考虑,同时,加入自热效应影响,且不用引入单独的自热网络,有效地提高了计算效率。模型中引入有物理背景的新参数来描述LDMOS特有的准饱和效应和自热效应。在计算实验中,模拟数据很好地吻合实际器件的测量数据,证明该模型适用于LD-MOS功率器件在电路中的仿真。An innovative analytical model for LDMOS including self-heating effects was presented. This novel physics-based LDMOS model was developed from threshold-voltage based model, BSIM3v3. Effects of the drain-end drift region were included and self-heating effects were simulated without using separate thermal network. All new parameters of this model have physics meanings. The calculated I-V characteristics from this model are in good agreement with experimental data, which demonstrates its suitability for simulation of circuits incorporating power LDMOS devices.

关 键 词：LDMOS 自热效应 BSIM3V3 解析模型 

分 类 号：TP386.1[自动化与计算机技术—计算机系统结构]