氩氧比例对Al_2O_3薄膜结构及性能的影响  

Influence of Ar/O_2 Ratio on Microstructures and Properties of Al_2O_3 Thin Films

作　　者：杨和梅[1] 姚正军[2] 闫凯[2] 陈丹丹[2] 

机构地区：[1]南京农业大学工学院机械系,南京210031 [2]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《有色金属》2009年第3期33-36,共4页Nonferrous Metals

基　　金：江苏省自然科学基金资助项目(BK2005128)

摘　　要：以纯铝为靶材,在不同氩氧比例下,采用直流反应磁控溅射方法制备Al2O3薄膜。利用X射线衍射(XRD)、能谱(EDS)、扫描电镜(SEM)和精密阻抗分析等方法检测薄膜的组织结构、化学成分和介电性能。结果表明,在250℃的低温条件下,不同氩氧比例的Al2O3薄膜都为非晶结构。随着氧分量的增加,Al2O3薄膜的表面由平滑致密变得粗糙,化学计量失配度增大。在氧分量较小的气氛下,Al2O3薄膜均匀致密,化学计量失配度较小,Al/O原子比接近2/3。随着氩氧比的增大,Al2O3薄膜的介电常数减小和介电损耗增大,当氩氧比为3∶1时,Al2O3薄膜的介电常数较大(ε=7.9～10.3),介电损耗较小(tanδ<0.2),薄膜的介电性能相对较好。Al2O3 thin films are prepared by reactive DC magnetron sputtering by pure aluminum target in Ar ＋O02 ambience of different Ar/O2 ratios. The mierostructures, chemical composition, surface morphology and dielectric properties of the Al2O3 films are examined by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, energy dispersive spectrometer （EDS） and impedance analyzer, respectively. The results show that for all Ar/O2 ratios, Al2O3 films at 250℃ temperature are amorphous. As the O2 content is increased, the surface of Al/O3 films becomes to rough from smooth and compact, stoichiometry mismatch of Al2O3 thin films is increased. Whereas at low O2 content, Al2O3 films are fairly homogeneous and compact and have low stoiehiometry mismatch with the Al/O near to 2/3. It is also indicated by the resuhs that the dielectric constant of Al2O3 films is deceased and the dielectric loss is increased with the increase of O2 content. The alumina thin films which have better dielectric property of high dielectric constant （ε = 7.9 - 10.5 ） and low dielectric loss （tanδ〈 0.2） is possible to be obtained at the Ar/O2 ratio of 3： 1.

关 键 词：无机非金属材料 AL2O3薄膜 直流反应磁控溅射 氩氧比 介电性能 

分 类 号：O484.4[理学—固体物理] TB383[理学—物理]