Halo结构器件研究综述  

Overview of Halo-Structured Device Study

作　　者：陈昕[1] 

机构地区：[1]同济大学电子与信息工程学院电子科学与技术系,上海201804

出　　处：《半导体技术》2009年第8期726-729,共4页Semiconductor Technology

摘　　要：随着集成电路产业的迅速发展,CMOS工艺已进入≥22nm特征尺寸的研究。讨论了Halo结构在当前工艺尺寸等比例缩小挑战背景下的应用情况。与传统长沟器件结构进行了比较,指出由于短沟效应(SCE)和漏致势垒降低(DIBL)效应需要专门工艺来克服,Halo注入通过在沟道两侧形成高掺杂浓度区,达到对SCE和DIBL进行有效抑制的目的,现已成为备受关注的结构。针对有关Halo的研究内容进行综述,并对其在CMOS工艺等比例缩小进程中所起的作用进行评述,对Halo的发展趋势进行了展望。With the rapid development of IC industry, CMOS technology comes into the scaling research of ≥22 nm. The application of Halo-structure devices with scaling down feature is discussed. Comparison with conventional long-channel device is made, it is pointed out that since the short-channel effects of SCE and DIBL should be overcome by special process, the effects can be depressed by Halo injection to form higher doping areas at two sides, and it becomes the completely concerned structure. The research of Halo structure is overviewed, its function in the process of CMOS scaling technology is described, and the developing trend is reviewed.

关 键 词：HALO结构 短沟效应 漏致势垒降低效应 工艺等比例缩小 

分 类 号：TN386[电子电信—物理电子学]