赝配GaAs/In_(0.2)Ga_(0.8)As量子阱导带不连续量的C-V和电容瞬态测量  

CONDUCTION BAND OFFSET IN PSEUDOMORPHIC GaAs/In 0 2 Ga 0 8 As QUANTUM WELL DETERMINED BY C V PROFILING AND DLTS TECHNIQUES 

作　　者：卢励吾[1,2,3] 张砚华[1,2,3] 杨国文 王占国[1,2,3] 

机构地区：[1]中国科学院半导体研究所半导体材料科学开放研究实验室 [2]国家光电子工程中心中国科学院半导体研究所 [3]香港科技大学物理系

出　　处：《物理学报》1998年第8期1339-1345,共7页Acta Physica Sinica

基　　金：国家自然科学基金;香港科技大学和中国科学院半导体研究所半导体材料科学开放研究实验室资助

摘　　要：分别采用二种不同方法测量分子束外延（ＭＢＥ）生长ＧａＡｓ／Ｉｎ０２Ｇａ０８Ａｓ单量子阱结构的导带不连续量ΔＥｃ：１）考虑样品界面电荷修正的电容电压（ＣＶ）分布；２）量子阱载流子热发射产生的电容瞬态（ＤＬＴＳ）．ＣＶ测得的ΔＥｃ＝０２２７ｅＶ，大约相当于８９％ΔＥｇ．ＤＬＴＳ测得的ΔＥｃ＝０２２９ｅＶ，大约相当于８９９％ΔＥｇ．结果表明，ＣＶ和ＤＬＴＳ获得的导带不连续量ΔＥｃ比较一致．Abstract The conduction band offset Δ E c has been determined for molecular beam epitaxy (MBE) grown GaAs/In 0 2 Ga 0 8 As single quantum well structure,by measuring the capacitance voltage profiling, while taking into account a correction for the interface charge density, and the capacitance transient resulting from thermal emission of carrier from the quantum well, respectively.We found that Δ E c=0 227eV,corresponding to about 89% Δ E g,from the C V profiling; and Δ E c=0 229eV, corresponding to about 89 9% Δ E g, from the deep level transient spectroscopy (DLTS) technique. The results suggest that the conduction band discontinuity Δ E c obtained from the C V profiling is in good agreement with that obtained from the DLTS technique.

关 键 词：砷化镓 铟镓砷 量子阱 导带 C-V 电容 

分 类 号：TN304.23[电子电信—物理电子学] O471.1[理学—半导体物理]