Optical properties of 1.3-μm InAs/GaAs quantum dots grown by metal organic chemical vapor deposition  

作　　者：李林 刘国军 李占国 李梅 王晓华 曲轶 薄报学 

机构地区：[1]National Key Lab of High Power Semiconductor Lasers,Changchun University of Science and Technology

出　　处：《Chinese Optics Letters》2009年第8期741-743,共3页中国光学快报（英文版）

摘　　要：The optical properties of self-assembled InAs quantum dots （QDs） on GaAs substrate grown by metalorganic chemical vapor deposition （MOCVD） are reported. Photoluminescence （PL） measurements prove the good optical quality of InAs QDs, which axe achieved using lower growth temperature and higher InAs coverage. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1305 nm and 30 meV, respectively, which are obtained as the QDs are finally capped with 5-nm In0.06Ga0.94As strain-reducing layer （SRL）. The PL spectra exhibit two emission peaks at 1305 and 1198 nm, which correspond to the ground state （GS） and the excited state （ES） of the QDs, respectively.The optical properties of self-assembled InAs quantum dots （QDs） on GaAs substrate grown by metalorganic chemical vapor deposition （MOCVD） are reported. Photoluminescence （PL） measurements prove the good optical quality of InAs QDs, which axe achieved using lower growth temperature and higher InAs coverage. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1305 nm and 30 meV, respectively, which are obtained as the QDs are finally capped with 5-nm In0.06Ga0.94As strain-reducing layer （SRL）. The PL spectra exhibit two emission peaks at 1305 and 1198 nm, which correspond to the ground state （GS） and the excited state （ES） of the QDs, respectively.

关 键 词：Emission spectroscopy GALLIUM Gallium alloys Ground state Indium arsenide Industrial chemicals Metallorganic chemical vapor deposition Optical properties Organic chemicals ORGANOMETALLICS Semiconducting indium VAPORS 

分 类 号：O471.1[理学—半导体物理]