supported by the National Natural Science Foundation of China (NSFC;grant no.22202182).
Aprotic lithium-oxygen(Li-O_(2))batteries have a high theoretical energy density,but they face challenges such as cathode blockage,high charge overpotential,and poor cycling stability.These are caused by sluggish reac...
financial support from the National Natural Science Foundation of China(Nos.21772162,21772165,22171237,22071208);Youth Innovation foundation of Xiamen(No.3502Z20206058).
Rhodium(Ⅲ)-catalyzed C-H couplings of arenes with alkenes are among the most powerful methods for C-C bond formation.For these transformations,subtle manipulation of ancillary ligands can lead to dramatic changes in ...
We thank the Australian Research Council(DP170100411:M.G.H.and M.S.);the National Science Centre(NCN)Poland(UMO-2016/22/M/ST4/00275:J.K.Z.and M.S.)for support of this work.C.Q.thanks Becas Chile(Agencia Nacional de Investigacion y Desarrollo)for financial support in the form of a PhD scholarship(2015-72160061),J.P.L.M.thanks the Australian Government for an Australian Postgraduate Award,J.D.thanks the China Scholarship Council and the Australian National University for a CSC-ANU scholarship,and J.K.Z.thanks the Foundation for Polish Science(FNP)for support.The authors acknowledge the facilities,and the scientific and technical assistance,of the Australian Microscopy&Microanalysis Research Facility and the Centre of Advanced Microscopy at the Australian National University.
Oligo(p-phenyleneethynylene)s(OPEs)end-capped with(alkynyl)bis(diphosphine)ruthenium and thiol/thiolate groups stabilize ca.2 nm diameter gold nanoparticles(AuNPs).The morphology,elemental composition and stability of...
supported by the National Natural Science Foundation of China(Nos.11174224 and 11404246);the Natural Science Foundation of Shandong Province(Nos.BS2015DX015 and ZR2013FM001);the Science and Technology Development Program of Shandong Province(No.2013YD01016);the Higher School Science and Technology Program of Shandong Province(Nos.J13LJ54 and J15LJ54)
Using two-step growth method and buffer layer annealing treatment,the double heterojunction structures of In_(0.82)Ga_(0.18) As epilayer capped with In As_(0.6)P0.4 layer were prepared on In P substrate by low pressur...
supported by the National Natural Science Foundation of China(Nos.61274113;11204212 and 61404091);the Program for New Century Excellent Talents in University(No.NCET-11-1064);the Tianjin Natural Science Foundation(Nos.13JCYBJC15700;13JCZDJC26100;14JCZDJC31500 and 14JCQNJC00800);the Tianjin Science and Technology Developmental Funds of Universities and Colleges(Nos.20100703;20130701 and 20130702)
Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray...
supported by the National 863 Program of China(Nos.2011AA010304 and 2011AA010306);the National 973 Program of China(No.2010CB327603)
We fabricate low threshold current monolithic distributed feedback(DFB) laser with a multi-mode interface(MMI) combiner using butt-joint metal-organic chemical vapor deposition technology with different waveguide ...
supported by the National Natural Science Foundation of China(Nos.60976038,61107054,61308051,and 61370043);the NSAF of China(No.U1330136);the Scientific and Technological Development Project in Jilin Province(No.20100419);the National Key Lab of High Power Semiconductor Lasers Foundation
High-strain InGaAs/GaAs quantum wells (QWs) are grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Photoluminescence (PL) at room temperature is applied for evaluation of the optical prope...
The reaction of Os(RL1)(PPh3)2(CO)Br, 1b, with qui-nolin-8-ol (HQ), 2, has furnished complexes of the type [Os(RL2)(PPh3)2(CO)(Q)], 3, in excellent yield (RL1 is C6H2O-2-CHNHC6H4R(p)-3-Me-5, RL2 is C6H2OH-2-CHNC6H4R(p...
supported by the National Basic Research Program of China (No. 2010CB327600);the National High Technology R&D Program of China (No. 2009AA03Z417);the National Natural Science Foundation of China (No. 61020106007);the Program for New Century Excellent Talents in University of Ministry of Education of China (NCET-08-0736);the Chinese Universities' Scientific Fund (BUPT2009RC0409, BUPT2009RC0410);the 111 Program of China (No. B07005)
Pure zinc blende structure GaAs/AlGaAs axial heterostructure nanowires (NWs) are grown by metal organic chemical vapor deposition on GaAs(111) B substrates using Au-catalyzed vapor-liquid-solid mechanism. Al adato...
The optical properties of self-assembled InAs quantum dots (QDs) on GaAs substrate grown by metalorganic chemical vapor deposition (MOCVD) are reported. Photoluminescence (PL) measurements prove the good optical...