SiC薄膜的制备和发光特性的研究  

Preparation and Photoluminescence Properties of Silicon Carbide Films

作　　者：孟旭东[1] 刘艳霞[1] 杨富[1] 

机构地区：[1]河北北方学院理学院,河北张家口075000

出　　处：《河北北方学院学报（自然科学版）》2009年第4期7-9,13,共4页Journal of Hebei North University:Natural Science Edition

基　　金：河北省教育厅自然基金项目(2004402);张家口市科技局项目(060178)

摘　　要：目的制备SiC薄膜并对其发光特性进行研究.方法用射频溅射法在玻璃衬底上制备SiC薄膜,退火处理后并利用光致发光谱(PL)对发光性能进行分析.结果SiC薄膜样品在紫外区存在360 nm和370nm两个发光峰,峰的强度都随着腐蚀时间的增长而增加,在t=20 min时达到最大,然后强度减小,而且峰的强度随退火温度升高而增加,在蓝光区存在470 nm发光峰,峰的强度随退火温度升高而增加.结论玻璃衬底腐蚀时间为20 min,SiC沉积时间为1 h时样品表现出了比较好的发光特性,在紫外区和蓝光区出现了光致发光,样品的发光强度随退火温度的增加显著增强.Objective To prepare SiC films and analyze its luminescence properties. Methods SiC films were prepared on glass substrates by RF magnetron sputtering and then annealed in a vacuum annealing system. Photoluminescence （PL） spectra was used to analyze the film luminescence properties. Results Two emission peaks were found at 360 nm and 370 nm, and its value of peak increased with corrosion time. The value went to the maximum at t=20 rain, then the intensity decreased. The experiment showed the intensity of the peak went up with increase of annealing temperature. Another emission peak was found at 470 nm, and its intensity of the peak went up with increase of annealing temperature. Conclusion The sample shows better luminescence property when corrosion time of glass substrate is 20 min. And when deposited time of SiC is 1 h, the luminescence occurs in blue light band and UV band for the prepared SiC films sample. The PL intensity becomes stronger as the annealing temperature increases.

关 键 词：SIC薄膜 射频溅射 光致发光 

分 类 号：O484.41[理学—固体物理]