C波段60W GaAs大功率内匹配晶体管  

An Internally Matched 60 W High Power GaAs HPFETs for C-Band Application

作　　者：邱旭[1] 李剑锋[1] 崔玉兴[1] 余若祺[1] 张博闻[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2009年第8期460-462,472,共4页Micronanoelectronic Technology

摘　　要：报道了一种采用内匹配技术制作的GaAs大功率晶体管。通过管芯的结构设计和工艺优化，进行了GaAs微波大栅宽芯片的研制；通过内匹配技术对HPFET（highperformanceFET）管芯进行阻抗匹配，实现了器件的大功率输出；通过提高栅-漏击穿电压、降低饱和压降等手段提高器件的功率和附加效率。经测试，当器件Vds=10V时，在5．3～5．7GHz频段输出功率P≥47．8dBm（60．3W），功率附加效率PAE≥42．8％，其中在5．5GHz频率点，输出功率达到48dBm（63．1W），附加效率为46．8％。A GaAs high power HPFET （high performance FET） fabricated by internally matching technology was reported. Through the structure design and process optimization of the chip, GaAs chips with large gate width were fabricated. The impedance of HPFET chips was matched by internally matching technology and high output power was realized. The output power and power additional efficiency of the device were improved with increase of the gate-drain breakdown voltage and decrease of the saturation voltage. As a result, the internally matched device yields an output power greater than 47.8 dBm （60.3 W） and more than 42.8% PAE across the band of 5.3 - 5.7 GHz with Vds = 10 V. An output power of 48 dBm （63. 1 W） and PAE of 46.8% are achieved at 5.5 GHz.

关 键 词：大功率 HPFET 高效率 内匹配 

分 类 号：TN304.23[电子电信—物理电子学] TN323.4