低压MOCVD生长参量对Ⅱ型InAs/GaSb超晶格材料表面形貌的影响  

Effect of the LP-MOCVD Growth Parameters For Type-Ⅱ InAs/GaSb Superlattices Surface Morphology

作　　者：吴雷学[1,2] 汪韬[1] 王警卫[1,2] 李晓婷[3] 景争[1,2] 尹飞[1,2] 梅书刚[1,2] 

机构地区：[1]中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,西安710119 [2]中国科学院研究生院,北京100049 [3]长安大学理学院,西安710061

出　　处：《光子学报》2009年第8期1937-1941,共5页Acta Photonica Sinica

基　　金：中国高技术研究发展计划(2005A000200);西部之光项目(2005ZD01);西安应用材料创新基金(XA-AM-200613)资助

摘　　要：采用自制低压金属有机源化学气相沉积设备,在(100)面GaSb单晶衬底上生长了Ⅱ型InAs/GaSb超晶格材料.利用双晶X射线衍射、光学显微镜、原子力显微镜和光致发光谱等分析手段对材料特性进行了表征,获得了表面光亮的晶体质量较好的Ⅱ型InAs/GaSb超晶格材料,在77K下得到光致发光谱峰值波长为3.25μm.研究了生长温度、过渡层、界面层对其表面形貌的影响,得出生长温度在500℃～520℃,无过渡层,使用InAsSb界面层有利于改善材料的表面形貌.Type-Ⅱ InAs/GaSb superlattices materials were grown on （100） GaSb substrate in a horizontal quartz reactor by a home-made low pressure metal organic chemical vapor deposition （LP-MOCVD）.Growth surface structures and morphologies were characterized by means of double crystal X-ray diffraction （DCXRD）,atomic force microscopy （AFM） and photo-luminescence （PL）.High quality mirror-like surfaces type-Ⅱ InAs/GaSb superlattices materials were obtained.Photoluminescence results show that the peak wavelength of the type-Ⅱ InAs/GaSb superlattices at 77 K is 3.25 μm.The effects of growth temperature,buffer layer and interfacial layer for surface morphology were discussed.The condition that growth temperature in 500 ℃~520 ℃,without buffer layer and InAsSb interfacial layer can improve the surface morphology of the material.

关 键 词：超晶格 金属有机源化学气相沉积 界面层 表面形貌 

分 类 号：O472[理学—半导体物理]