二步热氧化法制备SnO_2薄膜的特性(英文)  

Characterizations of SnO_2 films prepared by two-step thermal oxidization

作　　者：李栋宇[1] 刘贵昂[1] 潘喜诚[1] 邵乐喜[1] 

机构地区：[1]湛江师范学院物理科学与技术学院,湛江524048

出　　处：《功能材料与器件学报》2009年第4期370-374,共5页Journal of Functional Materials and Devices

基　　金：Guangdong Province Nature Science Foundation(No.31927);Zhanjiang Normal University Nature Science Foundation(NO.QL0703)

摘　　要：采用二步热氧化法制备SnO2薄膜。首先把真空蒸发法制备的金属锡膜在低于锡熔点的氧气气流中氧化半小时,然后提高氧化温度至400-550℃,继续氧化2小时。通过XRD,SEM和UV-VIS光谱仪分析氧化温度对薄膜的晶体结构、表面形貌和光学性质的影响。XRD分析得知在氧化温度为400℃时能观察到不同的SnO2衍射峰。氧化温度在550℃时能观察到(1 1 0),(1 0 1),(20 0)和(2 1 1)衍射峰。如果氧化温度低于550℃,衍射峰(2 0 0)很难观察到。通过SEM测量,SnO2薄膜表面致密均匀,而且表面颗粒大小与氧化温度有很大的联系。通过UV-VIS透过光谱得知随着氧化温度的升高,SnO2薄膜的光透过率也升高,光学禁带宽度也随着氧化温度的升高而升高。这种制备SnO2薄膜的工艺具有适于大面积制造,低成本,过程容易控制等很多优点。SnO2 films prepared by two -step thermal oxidization method. Tin films deposited by evaporation, were oxidized in oxygen flow below the melt - pointing temperature of metal tin for 30mins, and then, increased oxidization temperature to 400,450, 500, and 550℃ for 2h respectively. The effects of oxidation temperature on the structural properties, optical properties of the samples were investigated by X -ray diffraction （XRD）, scanning electron microscopy （SEM）, and UV -VIS transmittance spectra. XRD analyses revealed that various diffraction peaks of SnO2 were observed even with the oxidization temperature of 400℃. When Tin films were oxidized at a temperature of 550℃ , various diffraction peaks were indexed as （1 1 0）, （101）, （200）, and （2 1 1）. Moreover, the （200） peak from theSnO2 is hardly detected, if the oxidation temperature is less than 550℃. The surfaces of SnO2 thin films were compact and uniform by SEM measurements. It was found that the grain size and the surface morphology correlate with the oxidation temperature. UV -VIS transmittance spectra showed the optical transmission of SnO2 thin films in the visible wavelength region improved with increasing oxidation temperature. And the energy gap increases as the oxidation temperature increases too. The technique developed in this work also has many advantages than other methods for fabricating SnO2 films, such as easiness in large area fabrication, low- cost, high reliability in control processing.

关 键 词：SNO2薄膜 热氧化法 蒸发 

分 类 号：TB34[一般工业技术—材料科学与工程]